Excitonic parameters of GaN studied by time-of-flight spectroscopy
نویسندگان
چکیده
منابع مشابه
Excitonic field screening and bleaching in InGaN/GaN multiple quantum wells
Photoinduced carrier dynamics in a sequence of InGaN/GaN multiple quantum wells (MQWs) are studied by employing steady state and ultrafast spectroscopy at room temperature. Time-resolved photoluminescence (PL) measured short carrier lifetimes of ,140 ps at room temperature. Steady state differential transmission was used to measure the in-well field screening due to the photoinjected carriers. ...
متن کاملSynthesis of Serrated GaN Nanowires for Hydrogen Gas Sensors Applications by Plasma-Assisted Vapor Phase Deposition Method
Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function. NWs surface roughness have important role in gas sensors performance. In this research, GaN NWs have been synthesized on Si substrate by plasma-assisted vapor phase deposition at different deposition time, ...
متن کاملObservations of exciton-surface plasmon polariton coupling and exciton-phonon coupling in InGaN/GaN quantum wells covered with Au, Ag, and Al films.
The coupling of excitons to surface plasmon polaritons (SPPs) and longitudinal optical (LO) phonons in Au-, Ag-, and Al-coated InxGa1-xN/GaN multiple and single quantum wells (SQWs) was studied with time-resolved cathodoluminescence (CL) and CL wavelength imaging techniques. Excitons were generated in the metal-coated SQWs by injecting a pulsed high-energy electron beam through the thin metal f...
متن کاملExcitonic properties of strained wurtzite and zinc-blende GaNÕAlxGa1ÀxN quantum dots
We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite ~WZ! and zinc-blende ~ZB! crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conductionand valence-band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it h...
متن کاملGreen Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature
Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2011